Influence of interface charges on transport measurements in amorphous silicon films
نویسندگان
چکیده
2014 It is shown that the large variations found in transport measurements in thin films of low density-of-states amorphous silicon can be explained by the effect of a variable charge density at the film-substrate interface. The amount and even the sign of these charges have been varied by application of an electric field across the substrate. These surface charges effects can be used to measure unambiguously the density of states in the gap. It is found to be between 1016 and 1017 cm-3 eV-1, significantly smaller than values deduced from field-effect measurements. LE JOURNAL DE PHYSIQUE TOME 39, NOVEMBRE 1978, il
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